English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (512K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 100 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 8 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NDB16PFC-5EETInsignis Technology Corporation |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
AS4C2M32SA-6TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
MX25L12845GMI-10GMacronix |
IC FLSH 128MBIT SPI 120MHZ 16SOP |
|
S70FS01GSAGBHI213Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
MT53E768M32D4DT-046 AAT:EMicron Technology |
IC DRAM 24GBIT 2.133GHZ 200VFBGA |
|
IS46TR16256BL-125KBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
93AA86B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
48L256T-I/SNRoving Networks / Microchip Technology |
IC EERAM 256KBIT SPI 66MHZ 8SOIC |
|
71V65903S80BQGRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY62136VNLL-70ZSXARochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
GS81314LD19GK-933IGSI Technology |
IC SRAM 144MBIT PARALLEL 260BGA |
|
BR24T64F-WE2ROHM Semiconductor |
IC EEPROM 64KBIT I2C 400KHZ 8SOP |
|
AT24C1024BU4-UU-TRochester Electronics |
IC EEPROM 1MBIT I2C 1MHZ 8VFBGA |
