English
简体中文
CAP CER 47PF 6KV C0G/NP0 1812
LAMP INCAN RG-4.5 MINI SCR 6.15V
IC EEPROM 1MBIT PARALLEL 32PLCC
PASSIVE FREQUENCY DOUBLER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | 200 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93LC66AT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
DS1250AB-70IND+Maxim Integrated |
IC NVSRAM 4MBIT PARALLEL 32EDIP |
|
S25FL064LABBHN030Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
MT29AZ5A3CHHWD-18AAT.84FMicron Technology |
IC FLASH RAM 4GBIT PAR 162VFBGA |
|
MT41K512M8DA-107 XIT:PMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
BR93H86RFJ-2CE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8SOPJ |
|
EM6HC16EWKG-10HEtron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
RM25C64C-LSNI-TAdesto Technologies |
IC CBRAM 64KBIT SPI 10MHZ 8SOIC |
|
W632GG8NB-09Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
CY7C1370KV25-167BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AT24C02D-XHM-BRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
S25FL128LAGNFB013Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
70T653MS10BCRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |