English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 64Mb (256 Bytes x 32K pages) |
| 内存接口: | SPI |
| 时钟频率: | 85 MHz |
| 写周期时间 - 字，页: | 8µs, 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-UFBGA, WLCSP |
| 供应商设备包: | 44-WLCSP (3.52x4.22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62167G18-55ZXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
CY7C1440AV25-250BZXIRochester Electronics |
CACHE SRAM, 1MX36, 2.6NS PBGA165 |
|
IS43R86400D-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
MB85R256FPNF-G-JNERE2Fujitsu Electronics America, Inc. |
IC FRAM 256KBIT PARALLEL 28SOP |
|
DS1249Y-70IND#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
GD25Q64CWIGRGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
S29AS016J70BHI042Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
W631GG8MB12I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |
|
MX29SL800CTXEI-90GMacronix |
IC FLASH 8MBIT PARALLEL 48LFBGA |
|
IS49RL36160-093EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
S29GL064N90DFI010Flip Electronics |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
NMC27C256BN150Rochester Electronics |
OTP ROM, 32KX8, 150NS PDIP28 |
|
W988D2FBJX7E TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90VFBGA |
