类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPSDR |
内存大小: | 256Mb (8M x 32) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5.4 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-VFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR25S128GUZ-WE2ROHM Semiconductor |
IC EEPROM 128K SPI VCSP35L2 |
|
IS46R16320D-6TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
CY7C144E-15AXIFlip Electronics |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
CY7C09289V-9AXIFlip Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
CAV24C08WE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
MT29F4G08ABADAWP-AATX:DMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
71124S15YRochester Electronics |
SRAM 1 MEG (64K X 16-BIT) |
|
SST39VF402C-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
71T75602S133PFGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
AS6C4008A-55SINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 32SOP |
|
MT46H32M32LFB5-5 IT:B TRMicron Technology |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
IS42VM16400M-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
BR24A01AFJ-WME2ROHM Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8SOPJ |