English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 18Mb (256K x 72) |
| 内存接口: | Parallel |
| 时钟频率: | 100 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 484-BGA |
| 供应商设备包: | 484-FBGA (23x23) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93AA56B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
W9864G6KH-5 TRWinbond Electronics Corporation |
IC DRAM 64MBIT PAR 54TSOP II |
|
FM93CS56VM8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
IS43DR16640B-3DBI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
CAT93C46LRochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
IS46DR16640C-25DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
CY62157DV18L-55BVIRochester Electronics |
STANDARD SRAM, 512KX16, 55NS |
|
AT24C512C-XHD-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
IS42SM16400M-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
IS45S16160G-7CTLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
71V416L10PHGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1565KV18-500BZXICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AS7C4098A-20TCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
