类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II+ |
内存大小: | 72Mb (4M x 18) |
内存接口: | Parallel |
时钟频率: | 450 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL064N90TFA033Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
24C02/PRochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
24LC64-E/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIJ |
|
CY7C1364C-166BZIRochester Electronics |
IC SRAM 9MBIT PARALLEL 165FBGA |
|
CY7C1327B-100BGCRochester Electronics |
CACHE SRAM, 256KX18, 5.5NS |
|
MX25V1635FZNIMacronix |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
S25FL128LAGMFA000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
UPD44164182BF5-E33Y-EQ3-ARochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
BR93G66FV-3BGTE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 3MHZ 8SSOPB |
|
24FC02-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
MT53D512M32D2DS-053 AUT:DMicron Technology |
IC DRAM 16GBIT 1.866GHZ 200WFBGA |
|
BRCC064GWZ-3E2ROHM Semiconductor |
IC EEPROM 64KBIT I2C UCSP30L1 |
|
71V3577S85PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |