English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous |
| 内存大小: | 9Mb (256K x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.5 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1327B-100BGCRochester Electronics |
CACHE SRAM, 256KX18, 5.5NS |
|
MX25V1635FZNIMacronix |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
S25FL128LAGMFA000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
UPD44164182BF5-E33Y-EQ3-ARochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
BR93G66FV-3BGTE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 3MHZ 8SSOPB |
|
24FC02-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
MT53D512M32D2DS-053 AUT:DMicron Technology |
IC DRAM 16GBIT 1.866GHZ 200WFBGA |
|
BRCC064GWZ-3E2ROHM Semiconductor |
IC EEPROM 64KBIT I2C UCSP30L1 |
|
71V3577S85PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
70V261L25PFGRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
AT93C86A-10SQ-2.7Rochester Electronics |
AT93C86 - EEPROM, 1KX16, SERIAL |
|
24LC16B-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
CAT24WC66WIRochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
