类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-UFDFN Exposed Pad |
供应商设备包: | VSON008X2030 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1360C-200AXCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AS4C128M16MD4-062BANAlliance Memory, Inc. |
IC DRAM 2GBIT LVSTL 200FBGA |
|
SST38VF6402-90-5I-EKERoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
71V416S15BERenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
71V3559S75BQRochester Electronics |
IC SRAM 4.5MBIT PAR 165CABGA |
|
R1LP0108ESP-7SR#B0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOP |
|
HM5-6564-5Rochester Electronics |
8K X 8, 16K X 4 CMOS RAM MODULE |
|
25LC080DT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TDFN |
|
UPD44325362BF5-E40X-FQ1-ARochester Electronics |
QDR SRAM, 1MX36, 0.45NS |
|
CY7C1370KV33-200BZXICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
70V3589S133DRGRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208PQFP |
|
MX25U6435FZNI-10GMacronix |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
CY7C1371KV33-133AXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |