类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM |
内存大小: | 512Kb (64K x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 2.2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
THGBMJG8C2LBAILToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 32GBIT EMMC 153FBGA |
|
MT29F2G01ABAGD12-IT:GMicron Technology |
IC FLASH 2GBIT SPI 83MHZ 24TPBGA |
|
SST39SF040-55-4I-NHE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
25AA010AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8TSSOP |
|
CY7C1049BN-15VXIRochester Electronics |
STANDARD SRAM, 512KX8, 15NS |
|
CY7C006AV-25ACRochester Electronics |
DUAL-PORT SRAM, 16KX8 |
|
BR25320N-10SU-1.8ROHM Semiconductor |
IC EEPROM 32KBIT SPI 3MHZ 8SOIC |
|
S26KS256SDPBHV020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
CY7C1327G-133AXITCypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AS8C803601-QC150NAlliance Memory, Inc. |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS43TR16640AL-125JBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AS6C2008A-55BINTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 36TFBGA |
|
CY7C1021BL-15ZXIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |