类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-FBGA (8x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q256JVCIQWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
|
CY7C1318KV18-250BZXCRochester Electronics |
DDR SRAM, 1MX18, 0.45NS PBGA165 |
|
AT25DN256-XMHF-TAdesto Technologies |
IC FLASH 256KBIT SPI 8TSSOP |
|
S25FL128SDPMFV011Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
AS4C64M8D3L-12BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 78FBGA |
|
25AA040AXT-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8TSSOP |
|
S29GL128P90TFIR23Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
24FC64T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
MT58L1MY18PT-10Rochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY62146G30-45ZSXACypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT58L512Y36PT-5Rochester Electronics |
CACHE SRAM, 512KX36, 3.1NS PQFP1 |
|
24LC16BHT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C SOT23-5 |
|
IS43R86400E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |