English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, DDR II |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT25DN256-XMHF-TAdesto Technologies |
IC FLASH 256KBIT SPI 8TSSOP |
|
S25FL128SDPMFV011Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
AS4C64M8D3L-12BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 78FBGA |
|
25AA040AXT-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8TSSOP |
|
S29GL128P90TFIR23Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
24FC64T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
MT58L1MY18PT-10Rochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY62146G30-45ZSXACypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT58L512Y36PT-5Rochester Electronics |
CACHE SRAM, 512KX36, 3.1NS PQFP1 |
|
24LC16BHT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C SOT23-5 |
|
IS43R86400E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
AS4C32M8SA-7TCNAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
70T3539MS133BCI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
