IC SRAM 9MBIT PARALLEL 165CABGA
RF SHIELD 1.25" X 3.5" SMD
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 150 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.8 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PC28F00BP30EFAFlip Electronics |
IC FLASH 2GBIT PAR 64EASYBGA |
|
47C16T-I/STRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8TSSOP |
|
93C46BT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
IS61WV25616BLL-10TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
93C46BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
S25FL128LAGNFI010Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
MT29E512G08CEHBBJ4-3:B TRMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
24LC02B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
S25FL128SAGBHIA13Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
11LC080T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE 8MSOP |
|
MX25L4006EM2I-12GMacronix |
IC FLASH 4MBIT SPI 86MHZ 8SOP |
|
GD25Q16CSJGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8SOP |
|
MT55L512L18FF-11Rochester Electronics |
IC SRAM 8MBIT PARALLEL 165FBGA |