类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 150ns |
访问时间: | 150 ns |
电压 - 电源: | 4.75V ~ 5.25V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 24-DIP Module (0.600", 15.24mm) |
供应商设备包: | 24-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25DN011-XMHF-BAdesto Technologies |
IC FLASH 1MBIT SPI 104MHZ 8TSSOP |
|
S25FL256SAGBHI203Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
M95040-DRDW3TP/KSTMicroelectronics |
IC EEPROM 4KBIT SPI 20MHZ 8TSSOP |
|
93LC46/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
MT29F32G08ABCDBJ4-6ITR:D TRMicron Technology |
IC FLASH 32GBIT PARALLEL 132VBGA |
|
IS61LPS204836B-166TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
S-93C66BR0I-J8T1GABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 2MHZ 8SOP |
|
CY7C1061G30-10ZXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
R1EX25512ASA00A#S0Rochester Electronics |
EEPROM, 64KX8, SERIAL |
|
S29GL128S11TFIV10Rochester Electronics |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
71V35761SA166BQIRochester Electronics |
IC SRAM 4.5MBIT PAR 165CABGA |
|
FM24C17ULNRochester Electronics |
IC EEPROM 16KBIT I2C 100KHZ 8DIP |
|
CY62147DV30L-55BVXERochester Electronics |
IC SRAM 4MBIT PARALLEL 48VFBGA |