类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 72Mb (2M x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.8 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-LQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S-93C66BR0I-J8T1GABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 2MHZ 8SOP |
|
CY7C1061G30-10ZXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
R1EX25512ASA00A#S0Rochester Electronics |
EEPROM, 64KX8, SERIAL |
|
S29GL128S11TFIV10Rochester Electronics |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
71V35761SA166BQIRochester Electronics |
IC SRAM 4.5MBIT PAR 165CABGA |
|
FM24C17ULNRochester Electronics |
IC EEPROM 16KBIT I2C 100KHZ 8DIP |
|
CY62147DV30L-55BVXERochester Electronics |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
71V67602S133PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AS4C128M8D3LB-12BINTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
BR24G32FVJ-3GTE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8TSSOP |
|
CY7C1425JV18-250BZIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CAV93C46VE-GT3Rochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
AS4C128M8D3LB-12BINAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |