类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F2G08ABAGAWP-AAT:GMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
25LC040/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
71T75802S133BGI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
FM93C66ALM8Rochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
GD25LQ32DSIGRGigaDevice |
IC FLASH 32MBIT SPI/QUAD 8SOP |
|
71T75802S133BGGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
24AA256UIDT-I/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
AS7C3256A-15TINAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |
|
BR93G76F-3AGTE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 3MHZ 8SOP |
|
AS6C1016-55BINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 48TFBGA |
|
IS42S32160F-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
CY10E422L-7DCRochester Electronics |
STANDARD SRAM, 256X4, 7NS, |
|
24LC01BHT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |