English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (128 x 8) |
| 内存接口: | SPI |
| 时钟频率: | 10 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT24C04D-STUM-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ SOT23-5 |
|
W25Q128JVCIQ TRWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
93LC86/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
7134SA35CBRenesas Electronics America |
IC SRAM 32KBIT PARALLEL SB48 |
|
71V3556S166PFGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT48LC16M16A2B4-7E IT:GMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
CY14E256LA-SZ45XQRochester Electronics |
IC NVSRAM 256KBIT PAR 32SOIC |
|
CMM5104D3Rochester Electronics |
4K X 1-BIT SRAM |
|
CY7C1061DV33-10BVJXIFlip Electronics |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
UPD44645184AF5-E40-FQ1Rochester Electronics |
72-MBIT QDR II SRAM (4M X 18 BIT |
|
SST39VF801C-70-4C-EKE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
CY7C1415KV18-250BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS6C4008A-55BINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36TFBGA |
