类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S26KL512SDABHM030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
S26KS128SDPBHA020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 24FBGA |
|
S25FS512SAGMFI013Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
71V3579SA75BQGRochester Electronics |
IC SRAM 4.5MBIT PAR 165CABGA |
|
25LC080CT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
SST39VF1601C-70-4C-MAQERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
CAT93C46VP2I-GT3Rochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8TDFN |
|
70V658S12BCI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
IS45S16160G-7BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CY14V101LA-BA25XIRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48FBGA |
|
AT28C256F-15TURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
CY62128DV30L-55ZIRochester Electronics |
STANDARD SRAM, 128KX8 |
|
93LC56T/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |