类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 72Mb (2M x 36) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C235A-30JCRochester Electronics |
OTP ROM, 1KX8, 15NS PQCC28 |
|
CY14ME064J2-SXQTCypress Semiconductor |
IC NVSRAM 64KBIT I2C 8SOIC |
|
24LC64FT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C SOT23-5 |
|
MT53D512M16D1DS-046 WT:DMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
NM27C040Q170Rochester Electronics |
IC EPROM 4MBIT PARALLEL 32CDIP |
|
NM24C05M8XRochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8SO |
|
CY7C1470V25-200BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
70V657S12BCGIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
71V3558S100PFGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AS4C4M16SA-6TINTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 54TSOP II |
|
71T75802S166PFG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
S29GL512T13TFNV10Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
70261L15PFGRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |