English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 8 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C2M32S-7BCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
W25Q128JWSIM TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
UPD44325084BF5-E33-FQ1Rochester Electronics |
QDR SRAM, 4MX8, 0.45NS |
|
70V9279L7PRFGI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
70V659S12BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
MT29F2G08ABBGAH4-IT:GMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
71V424L15YGRochester Electronics |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
DS1258W-150#Rochester Electronics |
IC NVSRAM 2MBIT PARALLEL 40EDIP |
|
7164S25YGI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
AM27LS03/BFARochester Electronics |
STANDARD SRAM, 16X4, 65NS |
|
48L512T-I/SNRoving Networks / Microchip Technology |
IC EERAM 512KBIT SPI 66MHZ 8SOIC |
|
AT24C01D-XHM-BRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8TSSOP |
|
71V67703S75PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
