类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 32-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR93H56RFJ-2CE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 2MHZ 8SOPJ |
|
CY7C1019D-10VXICypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS49RL18320-125BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
RMLV0416EGSB-4S2#HA1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
AT24C08C-MAHM-TRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8UDFN |
|
AS7C3513B-12TCNTRAlliance Memory, Inc. |
IC SRAM 512KBIT PARALLEL 44TSOP2 |
|
70V7599S166BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
24LC64-I/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
DS1245ABP-70IND+Maxim Integrated |
IC NVSRAM 1MBIT PAR 34PWRCAP |
|
IS22ES08G-JCLA1ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64GBIT EMMC 153VFBGA |
|
RM25C128C-LTAI-TAdesto Technologies |
IC CBRAM 128KBIT SPI 8TSSOP |
|
AT25040B-XHL-BRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 20MHZ 8TSSOP |
|
IS61WV51216EDBLL-10BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |