类型 | 描述 |
---|---|
系列: | GL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
CY7C106B-20VCRochester Electronics |
STANDARD SRAM, 256KX4, 20NS |
![]() |
93LC46CXT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
![]() |
25AA320A-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 8TSSOP |
![]() |
BR24G04FVM-3GTTRROHM Semiconductor |
IC EEPROM 4KBIT I2C 400KHZ 8MSOP |
![]() |
70V3579S5BCRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
![]() |
MT58L1MY18FT-6.8Rochester Electronics |
CACHE SRAM, 1MX18, 6.8NS, CMOS, |
![]() |
7024L20JGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
![]() |
AT45DB641E-MHN-TAdesto Technologies |
IC FLASH 64MBIT SPI 85MHZ 8UDFN |
![]() |
CY27H512-45JCRochester Electronics |
OTP ROM, 64KX8, 45NS PQCC32 |
![]() |
71V3576S150PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
![]() |
GD25VQ40CTIGGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
![]() |
S29GL512T11DHV020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
![]() |
GVT71128E36T-8Rochester Electronics |
IC SRAM 4MBIT 100MHZ |