CAP TANT 4.7UF 20% 10V 1206
IC SRAM 36MBIT PARALLEL 165FBGA
RELAY GEN PURPOSE 4PDT 7A 125V
类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 36Mb (1M x 36) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.4 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93C56BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
M24C02-DRMN8TP/KSTMicroelectronics |
IC EEPROM 2KBIT I2C 1MHZ 8SO |
|
NM24C65UFM8Rochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
|
CYD18S72V-133BBIRochester Electronics |
IC SRAM 18MBIT PARALLEL 484FBGA |
|
BR93L46F-WE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 2MHZ 8SOP |
|
MT46H32M16LFBF-5 IT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60VFBGA |
|
CY62158H-45ZSXICypress Semiconductor |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
CY7C1312BV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY62167GN18-55BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
IS61WV204816BLL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 32MBIT PARALLEL 48TSOP I |
|
IS66WVC2M16ECLL-7010BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 32MBIT PARALLEL 54VFBGA |
|
25LC080B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8MSOP |
|
CY7C1360A-150AJCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |