CAP CER 0.047UF 200V X7R 0805
CACHE SRAM, 2MX36, 6.5NS PBGA165
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 72Mb (2M x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1362B-166BGCRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
24LC08BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
S29GL128S90DHSS10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
CY14B101LA-BA45XITCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48FBGA |
|
CY7C109BNL-15VCRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MX25R2035FOIL0Macronix |
IC FLASH 2MBIT SPI/QUAD 8TSSOP |
|
IS61WV102416BLL-10MLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
AT25SF161-SSHD-BAdesto Technologies |
IC FLASH 16MBIT SPI 104MHZ 8SOIC |
|
NV24C16UVLT2GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT I2C 1MHZ US8 |
|
CY7C1019CV33-12VIRochester Electronics |
STANDARD SRAM, 128KX8 |
|
CY7C09389V-7ACRochester Electronics |
DUAL-PORT SRAM, 64KX18, 7.5NS |
|
MT54W1MH18JF-4Rochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
IS61WV20488BLL-10MLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |