类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43LR32160C-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
CY7C1061AV33-10BAXIRochester Electronics |
IC SRAM 16MBIT PARALLEL 60FBGA |
|
MX25U51245GXDI00Macronix |
IC FLASH 512MBIT SPI/QU 24CSPBGA |
|
AT27C256R-45JU-TRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
24LC02BHT-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
S29GL064N90FFIS20Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
70V631S15BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
IS46DR16320C-3DBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
FM16W08-SGTRCypress Semiconductor |
IC FRAM 64KBIT PARALLEL 28SOIC |
|
IS49NLS18320A-25WBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144TWBGA |
|
IS42S81600F-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
24C02C/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY62128DV30L-70SIRochester Electronics |
STANDARD SRAM, 128KX8 |