类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.1 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TFBGA |
供应商设备包: | 165-PBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
R1QDA7218ABG-20IB0Rochester Electronics |
STANDARD SRAM, 4MX18, 0.45NS |
|
CY7C1041CV33-10VXCRochester Electronics |
STANDARD SRAM, 256KX16 |
|
CAV24C64YE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 8TSSOP |
|
W25Q80DVZPIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8WSON |
|
MR4A16BCYS35REverspin Technologies, Inc. |
IC RAM 16MBIT PARALLEL 54TSOP2 |
|
71V424L15YGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
25LC080A-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
S-25C020A0I-K8T3UABLIC U.S.A. Inc. |
IC EEPROM 2KBIT SPI 5MHZ 8TMSOP |
|
THGAF8G9T43BAIRToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 64GBIT UFS 153VFBGA |
|
71V424YS15PHGIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT29F128G08CBECBH6-12M:CMicron Technology |
IC FLASH 128GBIT PAR 152VBGA |
|
CY7C1514KV18-300BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
71V35761S200BQRochester Electronics |
IC SRAM 4.5MBIT PAR 165CABGA |