类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 143 MHz |
写周期时间 - 字,页: | 14ns |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TFBGA |
供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25SF641B-MHB-TAdesto Technologies |
IC FLASH 64MBIT SPI/QUAD 8UDFN |
|
MB85RS2MLYPNF-G-AWERE2Fujitsu Electronics America, Inc. |
IC FRAM 2MBIT SPI 50MHZ 8SOP |
|
AT24HC04B-PURoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
IS62WV10248EBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
AT93C66B-MAHM-ERoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8UDFN |
|
70V3589S133BCIRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
MR25H40MDFEverspin Technologies, Inc. |
IC RAM 4MBIT SPI 40MHZ 8DFN |
|
W25Q80EWUXIE TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8USON |
|
MX29GL128FHT2I-90GMacronix |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
IS46DR16160B-25DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
S29GL512P10TFIR20Flip Electronics |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
S29AL016J55TFI020Rochester Electronics |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
SM662PEB BDS ST602Silicon Motion |
FERRI EMMC 10GB 3D TLC + EXT. TE |