English
简体中文
MOSFET P-CH 40V 2.3A SOT23-3
IC SRAM 8MBIT PARALLEL 48VFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 8Mb (1M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-VFBGA |
| 供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT93C66B-MAHM-ERoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8UDFN |
|
70V3589S133BCIRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
MR25H40MDFEverspin Technologies, Inc. |
IC RAM 4MBIT SPI 40MHZ 8DFN |
|
W25Q80EWUXIE TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8USON |
|
MX29GL128FHT2I-90GMacronix |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
IS46DR16160B-25DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
S29GL512P10TFIR20Flip Electronics |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
S29AL016J55TFI020Rochester Electronics |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
SM662PEB BDS ST602Silicon Motion |
FERRI EMMC 10GB 3D TLC + EXT. TE |
|
CY7C1415KV18-250BZXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
70V3579S6BFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
70T3519S133BF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
24LC32AT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TDFN |