English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-SOIC (0.342", 8.69mm Width) |
| 供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7164S20DBRochester Electronics |
IC SRAM 64KBIT PARALLEL 28CERDIP |
|
S29GL064N90FFI030ARochester Electronics |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
CY7C1418BV18-167BZCRochester Electronics |
DDR SRAM, 2MX18, 0.5NS, CMOS, PB |
|
CY7C1425KV18-300BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS21ES04G-JQLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32GBIT EMMC 100LFBGA |
|
IS46DR16640B-3DBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
24LC32AFT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8MSOP |
|
25LC256-E/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8DFN |
|
MR256A08BCYS35REverspin Technologies, Inc. |
IC RAM 256KBIT PARALLEL 44TSOP2 |
|
24AA32AFT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
BR24G08FVT-3GE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOPB |
|
W9725G8KB25IWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60WBGA |
|
71256SA20YG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
