类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M5M51008DVP-70HISTRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
CY14V101LA-BA45XIRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48FBGA |
|
IS42SM16800H-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
W632GG8NB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
IS42S32800J-75ETLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IS45S16160G-7CTLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT28HC256-12TU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
W25Q32JVSFIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 16SOIC |
|
MT29F32G08CBACAWP-Z:C TRMicron Technology |
IC FLSH 32GBIT PARALLEL 48TSOP I |
|
MT58L64L36PT-10Rochester Electronics |
CACHE SRAM, 64KX36, 5NS PQFP100 |
|
IS25LP016D-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
IS42VM32160E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
IS43LD32640B-18BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 134TFBGA |