类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64K (8K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.6V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-DIPK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
CY7C1041GE30-10VXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
![]() |
70V659S12BFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208FPBGA |
![]() |
AS7C31024B-15TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP I |
![]() |
S34ML08G201BHV000Flip Electronics |
IC FLASH 8GBIT PARALLEL 63BGA |
![]() |
RM24C256DS-LTAI-BAdesto Technologies |
IC CBRAM 256KBIT I2C 1MHZ 8TSSOP |
![]() |
24AA64X/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
![]() |
71T75602S100PFGRochester Electronics |
512K X 36 SYNCHRONOUS ZBT SRAM |
![]() |
SST39VF3201B-70-4I-EKERoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
![]() |
IS62WV12816BLL-45TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
![]() |
AS4C64M16D3LB-12BANAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
![]() |
CY62148ESL-55ZAXARochester Electronics |
STANDARD SRAM, 512KX8, 55NS PDSO |
![]() |
S25FL256SAGMFBG00Rochester Electronics |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
![]() |
S-25C160A0I-J8T1U3ABLIC U.S.A. Inc. |
IC EEPROM 16KBIT SPI 5MHZ 8SOP |