English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 32-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S34ML08G201BHV000Flip Electronics |
IC FLASH 8GBIT PARALLEL 63BGA |
|
RM24C256DS-LTAI-BAdesto Technologies |
IC CBRAM 256KBIT I2C 1MHZ 8TSSOP |
|
24AA64X/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
71T75602S100PFGRochester Electronics |
512K X 36 SYNCHRONOUS ZBT SRAM |
|
SST39VF3201B-70-4I-EKERoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
IS62WV12816BLL-45TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
AS4C64M16D3LB-12BANAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
CY62148ESL-55ZAXARochester Electronics |
STANDARD SRAM, 512KX8, 55NS PDSO |
|
S25FL256SAGMFBG00Rochester Electronics |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
S-25C160A0I-J8T1U3ABLIC U.S.A. Inc. |
IC EEPROM 16KBIT SPI 5MHZ 8SOP |
|
IS45S16160J-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
24FC04HT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
M95M01-DWDW3TP/KSTMicroelectronics |
IC EEPROM 1MBIT SPI 16MHZ 8TSSOP |
