类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.2V ~ 3.6V, 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.465", 11.80mm Width) |
供应商设备包: | 32-sTSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL256SAGMFBG00Rochester Electronics |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
S-25C160A0I-J8T1U3ABLIC U.S.A. Inc. |
IC EEPROM 16KBIT SPI 5MHZ 8SOP |
|
IS45S16160J-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
24FC04HT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
M95M01-DWDW3TP/KSTMicroelectronics |
IC EEPROM 1MBIT SPI 16MHZ 8TSSOP |
|
AT45DB021E-SHNHC-TAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8SOIC |
|
DS1230Y-70Rochester Electronics |
IC NVSRAM 256KBIT PAR 28EDIP |
|
93C76CT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TDFN |
|
IS43DR16640C-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
IS42S86400D-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
BR93G76NUX-3BTTRROHM Semiconductor |
IC EEPROM 8K SPI VSON008X2030 |
|
MT29F1G08ABAEAWP-ITX:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
S25FS256SAGMFI000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |