类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-CDIP (0.600", 15.24mm) |
供应商设备包: | 28-CerDip |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL128LDPMFV001Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
MT58L64L18PT-7.5Rochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
RM24C32C-LTAI-TAdesto Technologies |
IC CBRAM 32KBIT I2C 1MHZ 8TSSOP |
|
W25M512JVCIQWinbond Electronics Corporation |
IC FLASH 512MBIT SPI 24TFBGA |
|
S25FL128SAGBHI213Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
IS42SM16400M-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
AT28HC256F-90FM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28FLATPK |
|
W631GU6MB15IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
IS43R86400E-5TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
23LC1024T-E/STRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/QUAD 8TSSOP |
|
CY7C1415BV18-200BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C1315CV18-200BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AT28C256-15LM/883-815Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 32LCC |