类型 | 描述 |
---|---|
系列: | GL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 100 ns |
电压 - 电源: | 1.65V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR24T256F-WE2ROHM Semiconductor |
IC EEPROM 256KBIT I2C 8SOP |
|
24LC128-I/PRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8DIP |
|
S-24CS04AFT-TB-GABLIC U.S.A. Inc. |
IC EEPROM 4KBIT I2C 8TSSOP |
|
71256L25DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
CY7C09179V-6AXCRochester Electronics |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
24LC32A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8MSOP |
|
CY7C1426JV18-300BZCESRochester Electronics |
SRAM 1.8V 36M-BIT 4M X 9-BIT |
|
7028L15PFGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
BR24G64FVM-3AGTTRROHM Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ 8MSOP |
|
71V416S10PHGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY62146G-45ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1325G-133BGXCRochester Electronics |
CACHE SRAM, 256KX18, 6.5NS |
|
S25FL128SAGNFM003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |