类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
11LC161-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8DIP |
|
S25FL127SABMFI103Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
AT27C512R-45JU-TRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
CAT25080HU4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT SPI 10MHZ 8UDFN |
|
MT29F32G08CBADBWP-12IT:D TRMicron Technology |
IC FLASH 32GBIT PAR 48TSOP I |
|
IS43R32400E-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 144LFBGA |
|
IS43TR16128B-15HBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
AS7C31024B-15TCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
BR25L040FJ-WE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 5MHZ 8SOPJ |
|
71V3556SA100BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
BR24S32F-WE2ROHM Semiconductor |
IC EEPROM 32K I2C 400KHZ 8SOP |
|
93C46A-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
GD25LD10CTIGRGigaDevice |
IC FLASH 1MBIT SPI/DUAL I/O 8SOP |