English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100, GL-N |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 64Mb (8M x 8, 4M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1370KV33-167BZXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
25LC160DT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
AS6C62256-55SCNAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOP |
|
AT24C32E-MAHM-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8UDFN |
|
IS42S16320F-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
SST25VF040B-50-4I-S2AE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
S29WS256P0LBFW000Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 84FBGA |
|
CY7C2642KV18-333BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
93C76C-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8MSOP |
|
24AA00/PRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8DIP |
|
S29JL032H90TAI310Rochester Electronics |
FLASH, 2MX16, 90NS, PDSO48 |
|
DS1230AB-200INDRochester Electronics |
IC NVSRAM 256KBIT PAR 28EDIP |
|
AT24C64D-MAHM-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8MINI MAP |
