类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-FBGA (6x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C2M32D1A-5BCNAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 144LFBGA |
|
R1LV5256ESP-7SR#B0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOP |
|
AS4C64M8D3-12BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 78FBGA |
|
S-25C512A0I-J8T1U4ABLIC U.S.A. Inc. |
IC EEPROM 512KBIT SPI 10MHZ 8SOP |
|
IS43LR32100D-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 90TFBGA |
|
SST39VF402C-70-4C-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
71V65803S150PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
SST39VF801C-70-4I-EKE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
MT58L256L36PT-10Rochester Electronics |
CACHE SRAM, 256KX36, 5NS PQFP100 |
|
S26KL128SDABHV020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 24FBGA |
|
CY62157G30-45BVXITCypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
IS42S32800J-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
71V016SA10BFRochester Electronics |
IC SRAM 1MBIT PARALLEL 48CABGA |