English
简体中文
MEMS OSC XO 8.1920MHZ LVCM LVTTL
IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
IC SRAM 4.5MBIT PARALLEL 100TQFP
SENSOR 75PSI 3/8-24UNF .5-4.5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 32Kb (4K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 650 ms |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 4-XFBGA, WLCSP |
| 供应商设备包: | 4-WLCSP (0.85x0.85) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL512P10FFCR20Rochester Electronics |
FLASH, 512MX1, 100NS, PBGA64 |
|
UPD46365362BF1-E40Y-EQ1-ARochester Electronics |
QDR SRAM, 1MX36, 0.45NS |
|
24AA01/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
MT29F128G08CBECBH6-12M:C TRMicron Technology |
IC FLASH 128GBIT PAR 152VBGA |
|
CY7C024BV-15AXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
GS8342Q18BGD-357IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
24LC256-I/MSRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8MSOP |
|
CY62167G30-55ZXECypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
24AA52T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
FT24C32A-UNR-TFremont Micro Devices |
IC EEPROM 32KBIT I2C 800KHZ 8DFN |
|
|
CY7C1350G-133AXCTCypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C164-15PCRochester Electronics |
STANDARD SRAM, 16KX4 |
|
MT25QL01GBBB8E12-0SIT TRMicron Technology |
IC FLSH 1GBIT SPI 133MHZ 24TPBGA |