类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 2ms |
访问时间: | - |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FM24C09ULZEMT8XRochester Electronics |
IC EEPROM 8KBIT I2C 8TSSOP |
|
IS42S16160G-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
11AA020-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SINGLE WIRE 8DIP |
|
93AA46BX-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
IS45S16160J-7CTLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
MX25L25645GXDI-10GMacronix |
IC FLASH 256MBIT SPI 24CSPBGA |
|
M95040-WMN6TPSTMicroelectronics |
IC EEPROM 4KBIT SPI 20MHZ 8SO |
|
GD25LQ128DSIGGigaDevice |
IC FLASH 128MBIT SPI/QUAD 8SOP |
|
S70FL01GSDSMFB010Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 16SOIC |
|
S26KS256SDGBHV030Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
71V25761S166PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
SST39VF802C-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
MX30UF4G18AB-TIMacronix |
IC FLASH 4GBIT PARALLEL 48TSOP |