







DIODE GEN PURP 650V 40A TO220-2
IC SRAM 4.5MBIT PAR 208CABGA
CG ADAPTER 12 BLACK PG11
CERAMIC FILTER
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 4.5Mb (256K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 3.15V ~ 3.45V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 208-LFBGA |
| 供应商设备包: | 208-CABGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT58V512V36FF-8.5Rochester Electronics |
CACHE SRAM, 512KX36, 8.5NS, CMOS |
|
|
CY7C1248KV18-400BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
|
M24256-DRMN6TPSTMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8SO |
|
|
IS46TR16128CL-15HBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
|
AT24C16BY6-YH-TRochester Electronics |
IC EEPROM 16KBIT I2C 8MINI MAP |
|
|
DS1250W-100IND+Maxim Integrated |
IC NVSRAM 4MBIT PARALLEL 32EDIP |
|
|
AT25DF041B-XMHN-TAdesto Technologies |
IC FLASH 4MBIT SPI 104MHZ 8TSSOP |
|
|
47C04T-I/STRoving Networks / Microchip Technology |
IC EERAM 4KBIT I2C 1MHZ 8TSSOP |
|
|
71V124SA12YG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
|
7024L20PFGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
|
IS42S32160D-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
|
MX25L3233FM1I-08QMacronix |
IC FLASH 32MBIT SPI/QUAD 8SOP |
|
|
S79FL512SDSMFBG01Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |