







IC HALL EFFECT SWITCH
IC SRAM 4MBIT PARALLEL 44TSOP II
SENSOR 100PSIS M12 5V
SENSOR 3000PSIS M12 5V 12"
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 2.4V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
70V7319S166BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
|
CY7C1424KV18-333BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
|
CY7C0851V-133AXCRochester Electronics |
IC SRAM 2MBIT PARALLEL 176TQFP |
|
|
S29GL512S10DHSS23Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
|
AS6C2008-55TINTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 32TSOP I |
|
|
FM93C46TM8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
|
BR24H64FVM-5ACTRROHM Semiconductor |
125 OPERATION IC BUS EEPROM FOR |
|
|
UPD431000AGZ-70LL-KJH-E3-ARochester Electronics |
SRAM 5V 1M-BIT (128K X 8) |
|
|
IS61C64AL-10JLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
|
S29AS016J70BFI040Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
|
MX29GL128FUXFI-11GMacronix |
IC FLSH 128MBIT PARALLEL 64LFBGA |
|
|
CY7C1009BN-15VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
|
CY7C1423KV18-300BZXCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |