类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 90 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TC) |
安装类型: | Through Hole |
包/箱: | 28-CDIP (0.600", 15.24mm) |
供应商设备包: | 28-CDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST39VF400A-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
AT24HC02BN-SP25-BRochester Electronics |
AT24HC02 - EEPROM, 256X8, SERIAL |
|
W25X10CLSNIGWinbond Electronics Corporation |
IC FLASH 1MBIT SPI 104MHZ 8SOIC |
|
CY62256VNLL-70ZIRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
MT29F2T08EMHAFJ4-3T:AMicron Technology |
IC FLASH 2TB PARALLEL 132VBGA |
|
IS62C51216AL-55TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
04364BSCLAC-7Rochester Electronics |
4MB (128KB X 36) SRAM |
|
CY7C1020D-10ZSXITCypress Semiconductor |
IC SRAM 512KBIT PAR 44TSOP II |
|
CY7C1061GN18-15ZSXICypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
GD25VE20CSIGRGigaDevice |
IC FLASH 2MBIT SPI/QUAD I/O 8SOP |
|
24LC024-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
RC28F320C3TD90Rochester Electronics |
FLASH, 2MX16, 90NS, PBGA64 |
|
71T75802S200BGRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |