类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.2 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FM93CS56EM8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
MC28F008-10/BRochester Electronics |
FLASH, 1MX8, 100NS, CDIP40 |
|
CY7C109BN-12ZXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
CY7C1350S-133AXIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
93AA46T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
IS42VM16160K-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
24LC01B-I/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 8TSSOP |
|
25LC080D-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8MSOP |
|
S29GL01GT12DHN023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
CY7C106BN-15VCRochester Electronics |
STANDARD SRAM, 256KX4, 15NS |
|
71V65703S80PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT29F1G08ABAFAWP-ITE:FMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
DS1265Y-70Rochester Electronics |
IC NVSRAM 8MBIT PARALLEL 36EDIP |