English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (64 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 6ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS1245YP-100+Maxim Integrated |
IC NVSRAM 1MBIT PAR 34PWRCAP |
|
25LC320XT-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 2MHZ 8TSSOP |
|
GS8162Z36DGD-250IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |
|
71V67602S166BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
AS6C8016-55BINAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
7009L20PFG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
FM93C56LZEM8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
IS45S16160J-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
CY62128BLL-70ZAXERochester Electronics |
STANDARD SRAM, 128KX8 |
|
29110BJARochester Electronics |
2K X 8 ASYNCHRONOUS CMOS SRAM |
|
MX25L6456EXCI-10GMacronix |
IC FLASH 64MBIT SPI 24TFBGA |
|
24C01CT-E/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 8TSSOP |
|
CAT24C16C5ATRRochester Electronics |
IC EEPROM 16KBIT I2C 5WLCSP |
