类型 | 描述 |
---|---|
系列: | SST26 SQI® |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 1.5ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WDFN (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA256T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIC |
|
7134LA20PDGRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 48DIP |
|
S34ML02G100BHI000Cypress Semiconductor |
IC FLASH 2GBIT PARALLEL 63BGA |
|
R1LV5256ESP-5SI#S1Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOP |
|
S29GL128S90FHSS30Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
34LC02T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8MSOP |
|
25LC640AX-E/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
93AA46C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8MSOP |
|
70V3319S166BCGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
MT57W512H36BF-7.5Rochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
FM22LD16-55-BGCypress Semiconductor |
IC FRAM 4MBIT PARALLEL 48FBGA |
|
AS7C256A-12JINTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
6116LA25SOG8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |