类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT41K256M16LY-107:N TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AT27C4096-55JURoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
93LC56AT/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
RMLV0408EGSB-4S2#HA1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
CY7C09349AV-12ACRochester Electronics |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
71V432S7PFGIRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
CAT24FC64WI-TE13Rochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
IS42S16160J-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
FM93C06EM8XRochester Electronics |
EEPROM, 16X16, SERIAL, CMOS |
|
IS25LP512M-JLLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
MT40A256M16LY-062E:FMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
S-24CS16A0I-J8T1GABLIC U.S.A. Inc. |
IC EEPROM 16KBIT I2C 400KHZ 8SOP |
|
CY62136CV30LL-70BVIRochester Electronics |
STANDARD SRAM, 128KX16 |