类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST39VF200A-70-4C-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 48TFBGA |
|
AS7C32096A-10TCNAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
S25FL256SAGBHBA03Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
S25FS128SAGMFV101Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
7134SA55JG8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
AT24CS02-XHM-TRochester Electronics |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
IS42SM16320E-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
24AA128T-I/MFRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8DFN |
|
AT28C256-15DM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CDIP |
|
IS42S16160G-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
71V416L15BEGRochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
CY7C1262XV18-366BZXCRochester Electronics |
QDR SRAM, 2MX18, 0.45NS PBGA165 |
|
CY7C09349AV-9AXCFlip Electronics |
IC SRAM 72KBIT PARALLEL 100TQFP |