类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL116K0XMFA013Flip Electronics |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
IS45S16800F-6CTLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT29F64G08CBABBWP-12IT:BMicron Technology |
IC FLASH 64GBIT PAR 48TSOP I |
|
70V7599S133BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
S29GL256P90TFIR20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
CY7C1263V18-400BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
S29GL128S10DHB010Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
71T75802S200PFGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
S29GL128P11FFIV10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
FM24C256VNRochester Electronics |
IC EEPROM 256KBIT I2C 8DIP |
|
AT24C02D-SSHM-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
FM93C46ALENRochester Electronics |
EEPROM, 64X16, SERIAL PDIP8 |
|
71V3556SA100BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |