类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, GL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 100 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71T75802S200PFGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
S29GL128P11FFIV10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
FM24C256VNRochester Electronics |
IC EEPROM 256KBIT I2C 8DIP |
|
AT24C02D-SSHM-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
FM93C46ALENRochester Electronics |
EEPROM, 64X16, SERIAL PDIP8 |
|
71V3556SA100BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
24LC00T-I/STRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8TSSOP |
|
71V632S6PFGI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
70V7599S200BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
24VL024T/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
7132SA100CBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
S29GL128S90DHI020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
71V124SA10YGIRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |