English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 100ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 48-DIP (0.600", 15.24mm) |
| 供应商设备包: | 48-SIDE BRAZED |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL128S90DHI020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
71V124SA10YGIRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS42SM32800K-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
CY7S1061G30-10ZSXITCypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
R1LV0108ESA-5SI#S1Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
CY7C1420AV18-200BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
71T75602S133BGGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
S25FL512SDPBHIC13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
71V416L15BEGIRochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
24AA04/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
STK14CA8-RF35Rochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
CY7C1019DV33-10BVXITRochester Electronics |
IC SRAM 1MBIT PARALLEL 48VFBGA |
|
GVT71128G36T-6Rochester Electronics |
IC SRAM 4.5MBIT 117MHZ |
